This site is awsome. 2. and corresponding graphs are plotted. The readings indicate the corresponding Voltage Division (volt/div) and the Zero Point positions of the channels. 05-09 3 Controlled HWR and FWR using RC triggering circuit 10-14 4 UJT firing circuit for HWR and FWR circuits 15-20 5 Generation of firing signals for thyristors/ trials using digital circuits / microprocessor. 1-6 2 Static characteristics of MOSFET & IGBT. Connect the circuit as shown in Figure 1.4. 24. CIRCUITS LABORATORY EXPERIMENT 6 TRANSISTOR CHARACTERISTICS 6.1 ABSTRACT In this experiment, the output I-V characteristic curves, the small-signal low frequency equivalent circuit parameters, and the switching When is the sensitivity of TRIAC greatest? VI Characteristics of Zener Diode 3. endobj b) Start pumps 1 and 2, and increase the speed until the pumps are operating at 60 rev/sec. Apparatus:-Experimental kit and patch cords. 0000015586 00000 n Sketch the VI characteristics of TRIAC. You compiled your data and plotted the points on a graph to form a “family” of characteristic curves To get your data, you first set ��(�)0P��� RC Triggering Circuit – HWR & FWR 196. 01-04 2 Static characteristics of MOSFET and IGBT. *TRIAC’s have very small switching frequencies. It has similar characteristics to an SCR but it differs for it consists of a DIAC with a gate terminal. %%EOF IGBT Characteristics 175. This list is not all-inclusive; however, it does contain the most commonly used symbols. NV6530 SCR Characteristic Trainer 2.
T���X�ħ�K"�(�)0P�S`��'�`/��S`�ħ�@�O���oh*�K"�(�h�(����>*��*'@M ����%���^���@ ����CU5%���/6��b?4P�~p�R��=�O�:���Sh�d�J`���N���u The triac can be operated with either positive or negative gate control voltage but in normal operation usually the gate voltage is positive in … Experiment 5 Registration No. Figure 9.3: Position of the notch and Vernier height gauge to set the datum. The triac has on and off state characteristics similar to SCR but now the char acteristic is applicable to both positive and negative voltages. 0000371364 00000 n Circuit Diagram: Model Graph: Theory: An SCR is a device which can be turned on through the gate pulse and turned off using power circuit i.e., turn on is controlled but turn off is uncontrolled in an SCR. 8.2. SCR Characteristics 3 2. The V-I characteristics for triac in the Ist and IIIrd quadrants are essentially identical to those of an SCR in the Ist quadrant. CIRCUIT DIAGRAM: Fig 1.1(a) Circuit diagram for VI characteristics of SCR. Plot the tabulated readings on a graph sheet with I E on X-axis and V E on Y-axis. Expected graph: Plot the tabulated readings on a graph sheet with I E on X-axis and V E on Y-axis. 0000491551 00000 n The family of curves obtained by plotting I C against V CE for each value of I B is called output characteristics. Quadrant I operation : VMT2, positive; VG1 positive, Quadrant II operation : VMT21 positive; VGl negative, eval(ez_write_tag([[336,280],'circuitstoday_com-medrectangle-4','ezslot_3',109,'0','0']));Quadrant III operation : VMT21 negative; VGl negative, Quadrant IV operation : VMT21 negative; VG1 positive. Repeat the experiment with the V-notch weir plate, but with 5 mm increments in water surface elevation. The triac has on and off state characteristics similar to SCR but now the char acteristic is applicable to both positive and negative voltages. IPC LAB MANUAL 3361702 IC DEPARTMENT GOVERNMENT POLYTECHNIC GANDHINAGAR Page 6 Experiment No: 3 TRIAC Characteristics AIM: To study the V-I characteristics of a TRIAC in both directions and also in Two DC power p-n . �2�m�1�U��@�i�$�Y��ր ��4�� ��ju�٘�2&R��[��}�B�6�ٔ�=g���bo��g�x�b0����(�n���s��D��v�fƝ3��3G��0g�r��p\J3��cR�9P-�b�DU\��>�z��"(�)4P�Sh�ħ���>J| By applying proper signal to the gate, the firing angle of the device can be controlled. <> The corresponding collector current I C is noted.
�Sh�8�(Y|�@%@����,�`�d��X��u Notice from the I-V characteristics that the output collector current is controlled by the input base current as modeled in Equation. Characteristics AIM: To Test the V-I characteristics of S.C.R. Dual channel Oscilloscope 3. q�q�ْ�����H[�:o�p;Z������%sKoK��!�zE�moq��lB�"�.k+�X芺%��a���5� Sketch Characteristics of TRIAC
���%�} Testing triac using a multimeter. Symbol Symbol Name Units E electric field V / cm 0000014974 00000 n In this blog post , we can see VI Characteristics of TRIAC, this post contains circuit diagram and model graphs for VI Characteristics of TRIAC Procedure Experiment Steps Connections are made as shown in the circuit V DRM is the maximum repetitive peak voltage (usually the maximum peak voltage of the applied AC wave) that can be reliably tolerated. VI CHARACTERISTICS OF IGBT 20 5. iv List of Experiments Exp No Experiment Nmae Page No 1 Static characteristics of SCR and DIAC. In this lab, you will study the I-V characteristics and small-signal model of a Metal Oxide Semiconductor Field Effect Transistor (MOSFET). ; V GT is a range of gate voltages that will trigger conduction. 0000015657 00000 n 6.3.2 illustrates the main characteristics of the triac. 3. <<8F8672D220EEB67CA04F4BA99C79657A>]/Prev 1071719>> P-N JUNCTION DIODE CHARACTERISTICS AIM: 1.To plot Volt-Ampere Characteristics of Germanium and Silicon P-N Junction EET120 Semiconductor Devices Experiment 1: Diode Characteristics By: Matthew Trump Online EET Department ECPI University I pledge to support the Honor System of ECPI. 0000001089 00000 n Based on the experiment, there are four possible ways to trigger the TRIAC. The TRIAC is 5 layer, 3 terminal Power semiconductor device. Experiment (1) characteristics of the thyristor Experiment aim To study and plot the characteristics of the thyristor. ��(�)0P�S�%�} To obtain V-I characteristics and to find on-state forward resistance of given SCR. Type above and press Enter to search. 0000491583 00000 n
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������7?4Pl~`�����v����b���wDط���(1�bٝo~h����@����|�C�������(2?4Pb~DH;���@�����; ���������gN7?8P �c�c�D��8��C�(/*#�"�p$ ۡ�����)�bZ�f�w$��Q�9d�)6�N�;����.�VG�T����-+���r[Qo�b�HVN�8VW�BtaUt�vY�x',tWm��M�4e���u��E°�c��UqG�0������5���`��H�B]Ul����,�_��mo�čI�r����g�6��E�����r4c�c�l�I[�L�gW,�u���!�����N��q(*�� It can be triggered by reaching its breakover voltage (+ or -). 5 5.0 TRIAC TRIGGERING MODES 5.1 Create the TRIAC AC POWER CONTROL circuit block. Study of Characteristics of SCR, MOSFETs &IGBTs AIM: 1. Experiment 2: Characteristics of Two Pumps in Series a) Set up the hydraulics bench valves, as shown in Figure 10.9, to perform the two pumps in series test. View ind module 1_4Q1920.pdf from ECEA 103 at Mapúa Institute of Technology. <> Is the triac conducting? of ECE CREC 3 1. OVERVIEW During the course of this experiment we will determine a number of important device parameters of an n-channel enhancement mode MOSFET by analyzing a number of DC characteristics. To plot the characteristics of SCR and to find the forward resistance, holding current and latching current. Characteristics of Uni Junction Transistor DIGITAL EXPERIMENTS (12) 6. POWER ELECTRONICS LAB MANUAL (NEE-551) DEPARTMENT OF ELECTRICAL & ELECTRONICS ... To study V-I characteristics of SCR and measure latching and holding currents. This is CE. Lab #1 Establishing and Displaying Characteristics in AC Technology Due date: TBD Objective • Familiarization with the use of an oscilloscope and function generator. POWER ELECTRONICS LAB CHARACTERISTICS OF IGBT Experiment 1c Aim: To study the output and transfer characteristics of IGBT Apparatus: Trainers Kit Ammeter (0-200mA) Voltmeter (0-20V) Patch Chords Circuit Diagram: Procedure: Out-Put Characteristics 6) Connect the collector, emitter and the gate terminals to the characteristics circuit Zener Diode Characteristics i) V-I Characteristics ii) Zener Diode act as a Voltage Regulator 4. 21. 0000182678 00000 n Measure the voltage across R6 and across the triac, respectively. The experiment is repeated with V CE kept constant say 2V, 3V, 4V etc. 0000015723 00000 n 0000089174 00000 n 0000432995 00000 n The base current I B is kept constant (eg. Theory:-A Semiconductor diode is prepared by joining P and N sections of a 4. RC Please switch off the kit when not in use. BACKGROUND INFORMATION 3.1 CHART OF SYMBOLS Here is a chart of symbols used in this lab. MOSFET Characteristics 15 4. The experiment is repeated with V CE kept constant say 2V, 3V, 4V etc. 0000184919 00000 n 0000014910 00000 n Lab 3 Appendices: Data sheets and Curve Tracer operation. x��}ۮf�q��(��Ď���y>do%���`�(���=��H��H���J#R�����F.���I�~�t����$��?��Zݫ�����{��W��o݃���^�������;?�q5�������MK�6FJ�}"R�$����U�~sԊ$) �6s�g-O��rt��:�q]�֊��*%��������7�n����K��VI}���K�kI�Z�c㱔�麯k� �5�$3��Ef��[˦V�MJF����c�q�+�$�h�=�5z���j
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�)a���'0Lt���#�0�y�����D0L��k_�\����p9&�r0L�#�˱01�����N\����s9&�r4L�#��?����9f̌�%��B^��T�����,�`YC�&Z�� S. No. Refer figure 4.2. eval(ez_write_tag([[300,250],'circuitstoday_com-medrectangle-3','ezslot_1',108,'0','0']));Typical V-I characteristics of a triac are shown in figure. It has a pair of phase controlled SCRs connected in inverse parallel manner on the same chip. 0000504293 00000 n MOSFET Characteristics 154. 0000015518 00000 n Power Electronics Lab Manual VII Sem EC EXPERIMENT-1(a) V-I CHARACTERISTICS OF SCR AIM: 1. 5. Our webiste has thousands of circuits, projects and other information you that will find interesting. �$x����H7��d'JR�v�}F���'H$�H]'��B��"W�8�'�P5 �kV��iYXq��@?|ZY�]�ykob��}����k,�!p��9=�p� ��H>��} k*�-��)4P�)�����@��R[|ISp�XS l�eM��bMy�ŗ5��4��K��ŚJ`�/k The V-I characteristics of a TRIAC is based on the terminal MT1 as the reference point. Characteristics of TRIAC The V-I characteristics of TRIAC are discussed below The triac is designed with two SCRs which are fabricated in the opposite direction in a crystal. Tabulation The first quadrant is the region wherein MT2 is positive w.r.t MT1 and vice- versa for the third quadrant. By keeping the base current (I B) constant, collector- emitter (V CE) voltage is varied and the corresponding I C values are obtained. Lab 3 Appendices: Data sheets and Curve Tracer operation. The triac can be operated with either positive or negative gate control voltage but in normal operation usually the gate voltage is positive in … 5 R-C Triggering TRIAC Circuit Objectives: 1. c) Turn the bench regulating valve to the fully closed position. trailer Figure 6.3b. It can be triggered by reaching its breakover voltage (+ or -). 0000014932 00000 n Adjust +V A to 6.0 Vdc. EXPERIMENT 7:Observation of characteristics of a Zener diode Debangshu Mukherjee BS.c Physics,1st Year Chennai Mathematical Institute 7.11.2008 1 Aim of experiment In this experiment, we try to observe the relation between NAME OF LABORATORY: Engg. ☞Repeat from step 2 for another value of gate current IG. �4���.qE�T��C+�8r\U�u�������b�O�DHCJ�P��j�eI���qŴB�
!��aC�&nY�qG1�*pl��*�%φ%�����@}5e>����h�ӛKf.\�ѹ=~��"Sa�v��q�̕ A multimeter can be used to test the health of a triac. _____ Figure 1.4: TRIAC DC Circuit 5.2 Momentarily press S1 (press and release). The V-I characteristics for triac in the Ist and IIIrd quadrants are essentially identical to those of an SCR in the Ist quadrant. The gate is the control terminal of the device. BJT Characteristics (CE Configuration) i) Input Characteristics ii) Output Characteristics 6. UJT Triggering of 3. Objective The objectives of this experiment are to: a) determine the characteristics of flow over a rectangular and a triangular weir, and b) determine the value of the discharge coefficient for both notches. 0000241512 00000 n 4. endobj 6. 6. Apparatus 1. Power electronic trainer 2. MT2 is positive with respect to MTX in the first quadrant and it is negative in the third quad rant. VI Characteristics of PN Junction Diode 2. & latching current 0000503880 00000 n To plot the characteristics of SCR and to find the forward resistance, holding current and ... readings for every 5V and enter the readings in the tabular column. k��-��)4P�������@����˚BE�*l�%M��bME�ŗ5��5��_�(�T�`�/i A multimeter can be used to test the health of a triac. Power electronic trainer 2. ��(�)0Pr�#��q@�O��b�B�>�J|���$�O���%>J|*��$�O���%>J|ʁ�$�O���%>J�^^�^[��>��} Two AVO meter 4. _____ 5.3 Measure the voltage across R6. Experiment No. Record the readings. CircuitsToday.com is an effort to provide free resources on electronics for electronic students and hobbyists. Show your calculations for voltage with firing angle in reading 3 Show your calculations for voltage with firing angle in reading 7 Sketch the variation of output voltage with firing angle. I am aware that as a member of the academic community it is my responsibility to turn in all suspected violators of the honor code. This is expected because triac consists of two SCRs connected in parallel but opposite in direc tions. 7-15 3 Controlled HWR & FWR using RC Triggering circuit. 92 0 obj /Contents 94 0 R The triac has on and off state characteristics similar to SCR but now the char acteristic is applicable to both positive and negative voltages. Output characteristics. This may lead to damage of the UJT. 2. Testing triac using a multimeter. 1-6 2 Static characteristics of MOSFET & IGBT. <> <> Operating characteristics of triac in the 1st and 3rd quadrants are similar but for the direction of flow of current and applied voltage. The gate current can control the TRIAC for either direction of polarity. 1 Thyristors DC Characteristics PREPARED BY: J.B. G. Ibarra 1.0 OBJECTIVES 1.1 To become NOTE: You can check out and keep the portable breadboards, VB-106 or VB-108, from the 111-Lab for yourself ( Only one each please) This is the first of three labs on basic semiconductor components. P-N Junction Diode Characteristics 3. >> Repeat the above experiment for different values of VDS2 = 15V. This large inrush of current must be restricted by employing external resist ance, otherwise the device may get damaged. Experiment procedure 1. To analyze RC- … iv List of Experiments Exp No Experiment Nmae Page No 1 Static characteristics of SCR and DIAC. V BO is the maximum forward or reverse voltage that the triac can tolerate before it breaks over into uncontrolled conduction. As already said in previous blog posts, the gate triggering may occur in any of the following four modes. In this experiment, you measured the characteristics of a typical NPN Transistor-an MPSA20. Increase in V BB1 increases the value of peak and valley voltages. ?��t��s���FV1���Y[Z,��I���g2�NI|w��^w&��U��&ut�&ut�OW���E��Y�lQ>�Ѯ%����˧7��C�Oo��_���-�~��.�'���E���EӮ�#��GE����x��F�+V�-6魆�>��3I�GEN�]�� _____ Power Electronics Lab, Department of Electrical Engineering, UET, Lahore. Its equivalent circuit is a pair of inverted four layer diodes. IPC LAB MANUAL 3361702 IC DEPARTMENT GOVERNMENT POLYTECHNIC GANDHINAGAR Page 1 Experiment No: 1 S.C.R. Operating characteristics of triac in the 1st and 3rd quadrants are similar but for the direction of … It has similar characteristics to an SCR but it differs for it consists of a DIAC with a gate terminal. Two continuously variable overload & short circuit protected DC regulated power supplies of 0-3v for Gate Current and 0-30v for MT1 & MT2 are 0000000973 00000 n Two DC power supply Introduction A thyristor is a four-layer p-n-p-n semiconductor device consisting of three p-n junctions. This is expected because triac consists of two SCRs connected in parallel but opposite in direc tions. Experiment No: 1 Experiment Name: Study of V- I Characteristics of SCR. TRIAC Characteristics Typical V-I characteristics of a triac are shown in figure. To plot the Start taking readings by pressing [Read] button over different temperature values. 2mm Patch cords. This is repeated for increasing values of I B. Based on the experiment, there are four possible ways to trigger the TRIAC. %PDF-1.4 Lab X: I-V Characteristics of Metal-Oxide-Semiconductor Field Effect Transisitors (MOSFETs) – Page 6 Experimentally, the channel conductance in the linear region is measured by holding VDS to a value of 50 mV to ensure linear operation. 0000299407 00000 n Experiment (1) characteristics of the thyristor Experiment aim To study and plot the characteristics of the thyristor. Transistor characteristics: 1) Input characteristics Keeping the collector- emitter (V CE) voltage constant, the base- emitter (V BE) voltage is increased from 0 and the corresponding base current (I B) values are noted. 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Turn the Heater ON by pressing ON the Heater Switch on the screen (Heating Mode). The circuits used in the gate for triggering the device are called the gate-triggering circuits. Experiment 2: Characteristics of Two Pumps in Series a) Set up the hydraulics bench valves, as shown in Figure 10.9, to perform the two pumps in series test. A chart of the symbols used in the Lab IV. LAB MANUAL ELECTRONIC DEVICES & CIRCUITS LAB Dept. Thank you. V-I CHARACTERISTICS OF SCR AIM: To obtain V-I characteristics and to find on-state forward resistance of given SCR. Physics Page 1 of 8 EXPERIMENT: DIODE & ZENER DIODE Objective:- To study the forward and reverse bias characteristics of diode and zener diode. LAB SUBJECT CODE: BT 2001 NAME OF DEPARTMENT: Engg. Electronics Engineering... Experiment- 1 1 external resist ance, otherwise the device are called gate-triggering! Of symbols Here is a negative resistance region from peak point to valley.... 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